■ PREFACE

Continuous advances in the performance and chip complexity of integrated circuits according to the Moore’s law based on the miniaturization of transistors over the past 50 years have enabled the Information Age for 21st century society. Today, however, the minimum feature size of transistors is in nanometer range and further scaling reductions appear to be facing fundamental limitations in some near future.
The structure of gate electrode of nano-scale MOSFETs should be changed from conventional planar (2D) structures to tri-gate (3D) structures in order to improve electrostatic distribution. The ideal structure is a fully-surrounded gate type using a Si-nanowire with good off-leakage control and pseudo one dimensional (1D) quasi-ballistic high-conduction, and regarded as a strong candidate for the post scaling era.
Zero-dimensional (0D) quantum dot structures, on the other hand, have attracted attention due to potential applications based on novel observed phenomena such as Coulomb blockade, ballistic transport, visible light emission and high-efficiency electron emission.
Furthermore, as an another dimension, alternative channel materials such as III-V/Ge, carbon nanotubes and grapheme or alternative binary systems such as spin-based devices are emerging for moving beyond the extrapolation of conventional scaling.
The purpose of this international symposium is to bring together world’s leading scientists in the field of silicon nanodevices and discuss about future directions of research, particularly on the following issues,

1. What is the dimension of electron devices in 2030?
3D? 2D? 1D? 0D? or Another Dimension?
2. What kind of device dominates after the era of the scaling limit of CMOS??
3. What are new applications created by post-CMOS devices?

Co-organizers: Shunri Oda and Hiroshi Iwai

　トランジスタ寸法の微細化は５０年間に渡って着実に進展し、集積回路の性能がムーアの法則に従って指数関数的に向上した結果、今日の高度情報通信社会を築いてきました。しかし、トランジスタの寸法がナノメートルのスケールになった今、このような微細化に基づく性能向上の限界は近いと言われています。MOSFETの構造は、従来の平面型ゲート電極構造から、立体的なゲート電極構造への転換が始まり、その究極的な形状として、理想的なゲート電界分布が得られる１次元ナノワイヤ構造の研究が盛んに行われています。
　一方、０次元量子ドット構造も、クーロンブロッケード、バリスティック伝導、高効率発光、電子放出などの量子効果現象が観測され、新しい応用展開が期待できます。さらに、カーボンなどの新しい材料や、従来の電荷を担体とするエレクトロニクスを超えるデバイス、例えばスピンデバイスなどの研究も盛んです。 この国際シンポジウムでは、シリコンナノデバイス研究の世界の第１人者を招聘して、今後20年後のシリコンデバイスの将来は何かを探ることを目的としています。

(Co-organizers: Shunri Oda and Hiroshi Iwai)